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APTGT50A60T1G
Phase leg Trench + Field Stop IGBT(R) Power Module
5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11
VCES = 600V IC = 50A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
CR1
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 80 50 100 20 176 100A @ 550V Unit V
August, 2007 1-5 APTGT50A60T1G - Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT50A60T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 50A Tj = 150C VGE = VCE , IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 50A Tj = 25C RG = 8.2 Tj = 150C Min Typ 3150 200 95 110 45 200 40 120 50 250 60 0.3 0.43 1.35 1.75 Max Unit pF
ns
ns
mJ mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=600V
IF = 50A VGE = 0V
50 1.6 1.5 100 150 2.6 5.4 0.6 1.2
2
V
August, 2007 2-5 APTGT50A60T1G - Rev 0
ns C mJ
IF = 50A VR = 300V
di/dt =1800A/s
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APTGT50A60T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.85 1.42 175 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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APTGT50A60T1G - Rev 0
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APTGT50A60T1G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 100
TJ = 150C VGE=19V
100
TJ=25C
80
IC (A)
TJ=125C
80 IC (A)
TJ=150C VGE=13V
60 40 20 0 0 0.5 1
TJ=25C
60
VGE=15V
40 20 0
VGE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
100 80 60 40 20 0 5
Transfert Characteristics 3.5
TJ=25C
Energy losses vs Collector Current 3 2.5 E (mJ)
VCE = 300V VGE = 15V RG = 8.2 TJ = 150C
Eoff
IC (A)
2 1.5 1
Er
TJ=125C TJ=150C TJ=25C
0.5 0 11 12 0 20 40 IC (A) 60 80
Eon
6
7
8
9
10
100
VGE (V) Switching Energy Losses vs Gate Resistance 3 2.5 2 E (mJ) 1.5 1
Er
Reverse Bias Safe Operating Area 125
VCE = 300V VGE =15V IC = 50A TJ = 150C
Eoff
Eon
100 IC (A) 75 50 25 0
VGE=15V TJ=150C RG=8.2
0.5 0 5 15
Eon
25 35 45 55 Gate Resistance (ohms)
65
0
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.2 0.9
IGBT
0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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4-5
APTGT50A60T1G - Rev 0
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0.7
APTGT50A60T1G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 20 40 IC (A) 60 80
Hard switching ZVS ZCS VCE=300V D=50% RG=8.2 TJ=150C
Forward Characteristic of diode 100 80 60 40 20
TJ=25C TJ=125C TJ=150C
IF (A)
Tc=85C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
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August, 2007

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